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MS1226

RF Amplifier RF Bipolar Trans

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SeekIC No. : 00613295 Detail

MS1226: RF Amplifier RF Bipolar Trans

MS1226 Data Sheet

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Part Number:
MS1226
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Description

Type :
Operating Frequency :
Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Features:

· 30 MHz
· 28 VOLTS
· IMD = -28 dB
· POUT = 30 WATTS
· GP = 18 dB MINIMUM
· COMMON EMITTER CONFIGURATION


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCEO Collector-emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 4.5 A
PDISS Power Dissipation 80 W
TJ Junction Temperature +200
TSTG Storage Temperature -65 to +150



Description

The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.




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