MS1401, MS1402, MS1403 Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:APT
MFG:RF Package Cooled:N/A D/C:APT
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: MS1401
File Size: 52707 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MS1402
File Size: 62727 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MS1403
File Size: 180440 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions.
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 36 | V |
VCEO | Collector-Emitter Voltage | 18 | V |
VCES | Collector-Emitter Voltage | 36 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 1.7 | A |
PDISS | Power Dissipation | 15 | M |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions.
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 36 | V |
VCEO | Collector-Emitter Voltage | 16 | V |
VCES | Collector-Emitter Voltage | 36 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 0.75 | A |
PDISS | Power Dissipation | 5 | M |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions.
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 36 | V |
VCEO | Collector-Emitter Voltage | 18 | V |
VCES | Collector-Emitter Voltage | 36 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 0.75 | A |
PDISS | Power Dissipation | 5.0 | M |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |