MMSF5N02HDR2G, MMSF5N03H, MMSF5N03HD Selling Leads, Datasheet
MFG:ON Package Cooled:2009+ROHS D/C:30000
MMSF5N02HDR2G, MMSF5N03H, MMSF5N03HD Datasheet download
Part Number: MMSF5N02HDR2G
MFG: ON
Package Cooled: 2009+ROHS
D/C: 30000
MMSF5N02HDR2G, MMSF5N03H, MMSF5N03HD
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Info of MMSF5N02HDR2G
Info of MMSF5N03H
Info of MMSF5N03HD
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About MMSD1000LT1
PDF/DataSheet Download
Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MMSF5N03HD
PDF/DataSheet Download
Datasheet: MMSF5N03HD
File Size: 301875 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MMSF5N03HD
PDF/DataSheet Download
Datasheet: MMSF5N03HD
File Size: 301875 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MMSF5N03HD General Description
MiniMOSTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MMSF5N03HD Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M ) |
VDGR |
30 |
Vdc |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
Vdc |
| Drain Current - Continuous @ TA = 25 Drain Current - Continuous @ TA = 100 Drain Current - Single Pulse (tp 10 s) |
ID ID IDM |
6.5 4.4 33 |
Adc Apk |
| Total Power Dissipation @ TA = 25(1) |
PD |
2.5 |
Watts |
| Operating and Storage Temperature Range |
55 to 150 |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0mH, RG = 25 ) |
EAS |
450 |
mJ |
| Thermal Resistance - Junction to Ambient (1) |
RJA |
50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds |
TL |
260 |
MMSF5N03HD Features
` Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
` Logic Level Gate Drive - Can Be Driven by Logic ICs
` Miniature SO8 Surface Mount Package - Saves Board Space
` Diode Is Characterized for Use In Bridge Circuits
` Diode Exhibits High Speed, With Soft Recovery
` IDSS Specified at Elevated Temperature
` Avalanche Energy Specified
` Mounting Information for SO8 Package Provided
MMSF5N03HD Connection Diagram
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