MMSD16128808S-V

`  Stack of eight 256Mbit SDRam.
`  Organized as 128Mx16-bit.
`  Single +3.3V ±0.3V power supply.
`  Fully synchronous ; all signals  registered on positive edge of system clock.
`  Internal  pipelined  operation ; column adress can be changed every  clock  cycle.
`  Programmable  burst   lengths ; 1, 2, 4, 8  or  full  page.
`  Auto  Precharge,  includes  Concurrent  Auto Precharge, and Auto  Refresh Modes.
`  Self Refresh Modes.
`  LVTTL-compatible inputs and outputs.
`  Available Temperature Range :
       0to +70
    -40 to +85
`  Available with screening option for high reliability application (Space, etc...).

The MMSD16128808S-V is a high-speed highly integrated Synchronous Dynamic Random Access Memory containing 2,147,483,648 bits.

It is organized  with four banks  of 512 Mbit.

Each bank has a 16-bit interface and is selected with specific #CS CLK and CKE.

MMSD16128808S-V is particularly well suited for use in high reliability, high performance and high density system applications, such as solid state mass recorder, server or workstation.

The MMSD16128808S-V is packaged in a 58 pin SOP.