MMSF10N03ZG2, MMSF10N03ZR2G, MMSF1308 Selling Leads, Datasheet
MFG:ON Package Cooled:SOP-8 D/C:07+
MMSF10N03ZG2, MMSF10N03ZR2G, MMSF1308 Datasheet download
Part Number: MMSF10N03ZG2
MFG: ON
Package Cooled: SOP-8
D/C: 07+
MFG:ON Package Cooled:SOP-8 D/C:07+
MMSF10N03ZG2, MMSF10N03ZR2G, MMSF1308 Datasheet download
MFG: ON
Package Cooled: SOP-8
D/C: 07+
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PDF/DataSheet Download
Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMSD1000LT1
File Size: 175632 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMSF1308
File Size: 45056 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• High Speed Switching Provides High Efficiency for DC/DC Converter
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Exhibits High Speed, With Soft Recovery
Rating |
Symbol |
Value |
Units |
DraintoSource Voltage |
VDSS |
30 |
V |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
V |
GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
Continuous Drain Current @ TA = 25°C (1) Pulsed Drain Current (2) |
ID IDM |
7.0 50 |
Adc |
Total Power Dissipation @ TA = 25°C |
PD |
2.5 |
W |
Operating and Storage Temperature Range |
TJ,Tstg |
65 to 150 |
°C |