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MMJT9410T1, MMJT9410T1G, MMJT9435

MMJT9410T1, MMJT9410T1G, MMJT9435 Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:Sot-223  D/C:00+, original

MMJT9410T1 Picture

MMJT9410T1, MMJT9410T1G, MMJT9435 Datasheet download

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Part Number: MMJT9410T1

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: Sot-223

D/C: 00+, original

Description: TRANS NPN BIPOLAR 3A 30V SOT223

 

 
 
 
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  • MMJT9435T1

  • Vendor: Motorola Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-05-11
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  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
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    (109)

About MMJT350T1

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Datasheet: MMJT350T1

File Size: 59010 KB

Manufacturer: ONSEMI [ON Semiconductor]

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  • MMJT9435T1

  • Vendor: Motorola Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-05-11
  • Inquire Now
  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
    Fax: --
    (109)

About MMJT350T1

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Datasheet: MMJT350T1

File Size: 59010 KB

Manufacturer: ONSEMI [ON Semiconductor]

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MMJT9435 Suppliers

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  • MMJT9435T1

  • Vendor: Motorola Pack: SOT D/C: 09+& Qty: 1000  Adddate: 2024-05-11
  • Inquire Now
  • LanKo Electroics co,ltd   China
    Contact: Mr.lanko  
    Tel: 86-755-82500769
    Fax: --
    (109)

About MMJT9435

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Datasheet: MMJT9435

File Size: 96999 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MMJT9410T1 Parameters

Technical/Catalog InformationMMJT9410T1
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)3A
Power - Max3W
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic150mV @ 20mA, 800mA
Frequency - Transition72MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingDigi-Reel?
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMJT9410T1
MMJT9410T1
MMJT9410T1OSDKR ND
MMJT9410T1OSDKRND
MMJT9410T1OSDKR

MMJT9410T1G Parameters

Technical/Catalog InformationMMJT9410T1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)3A
Power - Max3W
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic150mV @ 20mA, 800mA
Frequency - Transition72MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMJT9410T1G
MMJT9410T1G
MMJT9410T1GOSDKR ND
MMJT9410T1GOSDKRND
MMJT9410T1GOSDKR

MMJT9435 Maximum Ratings

Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
30
Vdc
Collector-Base Voltage
VCB
45
Vdc
Emitter-Base Voltage
VEB
8.0
Vdc
Base Current - Continuous
IB
1.0
Adc
Collector Current - Continuous
- Peak
IC
3.0
5.0
Adc
Total Power Dissipation @ TC = 25
Derate above 25
Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR?4 bd materi
Total PD @ TA = 25 mounted on 0.92" sq. (590 sq. mm) Drain pad on FR4 bd material
Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR?4 bd materia
PD
3.0
0.025
2.0
1.5
0.8
W
mW/W
W
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to
+150

MMJT9435 Features

• Collector Emitter Sustaining Voltage - VCEO(sus)
                           = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE
                           = 140 (Min) @ IC = 1.2 Adc
                           = 125 (Min) @ IC = 3.0 Adc
• Low Collector Emitter Saturation Voltage - VCE(sat)
                           = 0.275 Vdc (Max) @ IC = 1.2 Adc
                           = 0.68 Vdc (Max) @ IC = 5.0 Adc
• SOT223 Surface Mount Packaging

MMJT9435 Connection Diagram

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