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...designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
MMJT350T1 Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCB
300
Vdc
Emitter-Base Voltage
VEB
3.0
Vdc
Collector Current - Continuous - Peak
IC
0.5 0.75
Adc
Total Power Dissipation @ TC= 25 Derate above 25 Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd materi Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd materia
PD
2.75 22 1.40 0.65
W mW/W W
Operating and Storage Junction Temperature Range
TJ, Tstg
-55 to +150
MMJT350T1 Features
` High Collector?Emitter Sustaining Voltage -VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc ` Excellent DC Current Gain -hFE = 30-240 @ IC = 50 mAdc ` Epoxy Meets UL94, V-0 @ 0.125 in ` ESD Ratings:Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V
MMJT350T1 Connection Diagram
MMJT350T1G Parameters
Technical/Catalog Information
MMJT350T1G
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
PNP
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Power - Max
2.75W
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Vce Saturation (Max) @ Ib, Ic
-
Frequency - Transition
-
Current - Collector Cutoff (Max)
-
Mounting Type
Surface Mount
Package / Case
SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging
Tape & Reel (TR)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
MMJT350T1G MMJT350T1G
MMJT9410 Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
300
Vdc
Collector-Base Voltage
VCB
300
Vdc
Emitter-Base Voltage
VEB
3.0
Vdc
Collector Current - Continuous - Peak
IC
0.5 0.75
Adc
Total Power Dissipation @ TC = 25 Derate above 25 Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR - 4 bd materi Total PD @ TA = 25 mounted on 0.92" sq. (590 sq. mm) Drain pad on FR 4 bd material Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR - 4 bd materia
PD
2.75 22 1.40 0.65
W mW/ W W
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to +150
MMJT9410 Features
• Collector Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 85 (Min) @ IC = 1.0 Adc = 60 (Min) @ IC = 3.0 Adc • Low Collector Emitter Saturation Voltage - VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 5.0 Adc • SOT223 Surface Mount Packaging