Transistors Bipolar (BJT) 0.5A 30V 2.75W PNP
MMJT350T1: Transistors Bipolar (BJT) 0.5A 30V 2.75W PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 300 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.5 A | ||
DC Collector/Base Gain hfe Min : | 30 at 50 mA at 10 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
` High Collector?Emitter Sustaining Voltage
-VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
` Excellent DC Current Gain
-hFE = 30-240 @ IC
= 50 mAdc
` Epoxy Meets UL94, V-0 @ 0.125 in
` ESD Ratings:Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Rating |
Symbol |
Value |
Unit |
Collector-Emitter Voltage |
VCEO |
300 |
Vdc |
Collector-Base Voltage |
VCB |
300 |
Vdc |
Emitter-Base Voltage |
VEB |
3.0 |
Vdc |
Collector Current - Continuous - Peak |
IC |
0.5 |
Adc |
Total Power Dissipation @ TC= 25 Derate above 25 Total PD @ TA = 25 mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd materi Total PD @ TA = 25 mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd materia |
PD |
2.75 |
W |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
-55 to |
MMJT350T1 is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Technical/Catalog Information | MMJT350T1 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 2.75W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Vce Saturation (Max) @ Ib, Ic | - |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MMJT350T1 MMJT350T1 |