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MJL3281A, MJL3281AG, MJL4281A

MJL3281A, MJL3281AG, MJL4281A Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-3PL  D/C:02+

MJL3281A Picture

MJL3281A, MJL3281AG, MJL4281A Datasheet download

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Part Number: MJL3281A

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3PL

D/C: 02+

Description: TRANS BIPO NPN 15A 350V TO264

 

 
 
 
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  • MJL3281A

  • Vendor: ON Pack: TO D/C: 08+& Qty: 3855 Note: NEW AND IN ORIGINAL PACKAGE,IN STOCK  Adddate: 2024-12-26
  • Inquire Now
  • HK Mingzhou Tech Co.,   China
    Contact: Ms.Tina   MSN:ic@mingzhou.hk
    Tel: 86-755-83001628
    Fax: 86-755-83000886
    (46)
  • MJL3281A

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • MJL3281AG

  • Vendor: ONS Qty: ?2,000 Note: closeout  Adddate: 2024-12-26
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  • USA IC LTD. (ASIA)   China
    Contact: Mr.Martin Qiu  
    Tel: 86-755-2394-2008
    Fax: 86-755-2394-2068
    (149)
  • MJL1302A

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)

About MJL3281A

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Datasheet: MJL3281A

File Size: 208622 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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  • MJL3281AG

  • Vendor: ONS Qty: ?2,000 Note: closeout  Adddate: 2024-12-26
  • Inquire Now
  • USA IC LTD. (ASIA)   China
    Contact: Mr.Martin Qiu  
    Tel: 86-755-2394-2008
    Fax: 86-755-2394-2068
    (149)
  • MJL1302A

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
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  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
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  • MJL21193

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
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    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
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About MJL1302

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Datasheet: MJL1302

File Size: 208622 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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MJL4281A Suppliers

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  • MJL4281A

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
  • Inquire Now
  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • MJL1302A

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
  • Inquire Now
  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)
  • MJL21193

  • Vendor: ON D/C: 07+&   Adddate: 2024-12-26
  • Inquire Now
  • TEAM SOURCE (HK) LIMITED   China
    Contact: Ms.edithchen   MSN:EDITH_CHEN@126.COM
    Tel: 86-755-33060402 33062656
    Fax: 86-755-33062657
    (0)

About MJL4281A

PDF/DataSheet Download

Datasheet: MJL4281A

File Size: 57060 KB

Manufacturer: ONSEMI [ON Semiconductor]

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MJL3281A Parameters

Technical/Catalog InformationMJL3281A
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)260V
Current - Collector (Ic) (Max)15A
Power - Max180W
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-264
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJL3281A
MJL3281A
MJL3281AOS ND
MJL3281AOSND
MJL3281AOS

MJL3281A Maximum Ratings

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
200
Vdc
CollectorBase Voltage
VCBR
200
Vdc
EmitterBase Voltage
VEBO

7

Vdc
CollectorEmitter Voltage - 1.5 V
VCEX
200
Vdc

Collector Current - Continuous
- Peak (1)

IC
15
25
15
Adc
Base Current - Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25
Derate Above 25
PD


200
1.43

Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150

MJL3281A Features

• The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary: - Gain Linearity from 100 mA to 7 A - High Gain - 60 to 175 - hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area - 1 A/100 V @ 1 sec
• High fT - 30 MHz Typical

MJL3281AG Parameters

Technical/Catalog InformationMJL3281AG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)260V
Current - Collector (Ic) (Max)15A
Power - Max180W
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 500mA, 5A
Frequency - Transition30MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-3BPL
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MJL3281AG
MJL3281AG
MJL3281AGOS ND
MJL3281AGOSND
MJL3281AGOS

MJL4281A Parameters

Technical/Catalog InformationMJL4281A
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)350V
Current - Collector (Ic) (Max)15A
Power - Max230W
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 800mA, 8A
Frequency - Transition35MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-3BPL
PackagingTube
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJL4281A
MJL4281A
MJL4281AOS ND
MJL4281AOSND
MJL4281AOS

MJL4281A Maximum Ratings

Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
350
Vdc
CollectorBase Voltage
VCBR
350
Vdc
EmitterBase Voltage
VEBO

5.0

Vdc
CollectorEmitter Voltage - 1.5 V
VCEX
350
Vdc

Collector Current - Continuous
- Peak (Note 1)

IC
15
30
Adc
Base Current - Continuous
IB
1.5
Adc
Total Power Dissipation @ TC = 25
Derate Above 25
PD


230
1.84

Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150

MJL4281A Features

• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A/100 V @ 1 Second
• High fT

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