MJL21196

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 16 A
Maximum Operating Frequency : 4 MHz (Min)
Package / Case : TO-3BPL


Application

• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 2.50 A, 80 V, 1 Second


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	250	Vdc
CollectorBase Voltage	VCBR	400	Vdc
EmitterBase Voltage	VEBO	5	Vdc
CollectorEmitter Voltage - 1.5 V	VCEX	400	Vdc
Collector Current - Continuous - Peak (1)	IC	16 30	Adc
Base Current - Continuous	IB	5	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	200 1.43	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJL21196
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	250V
Current - Collector (Ic) (Max)	16A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 8A, 5V
Vce Saturation (Max) @ Ib, Ic	1.4V @ 800mA, 8A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-3BPL
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJL21196 MJL21196 MJL21196OS ND MJL21196OSND MJL21196OS