MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO
MJF18008, MJF18009, MJF18204 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: 09+
D/C: TO
Description: TRANS PWR NPN 8A 450V TO220-3FP
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PDF/DataSheet Download
Datasheet: MJF18008
File Size: 431831 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJF18009
File Size: 443783 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJF18204
File Size: 495953 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | MJF18008 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 450V |
| Current - Collector (Ic) (Max) | 8A |
| Power - Max | 45W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 2A |
| Frequency - Transition | 13MHz |
| Current - Collector Cutoff (Max) | 100A |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJF18008 MJF18008 MJF18008OS ND MJF18008OSND MJF18008OS |
|
Rating |
Symbol |
Value
|
Unit |
| CollectorEmitter Breakdown Voltage |
VCES |
1500 |
Vdc |
| CollectorBase Sustaining Voltage |
VCEO(SUS) |
650 |
Vdc |
| EmitterBase Voltage |
VEBO |
8.0 |
Vdc |
| RMS Isolation Voltage (2) (for 1 sec, TA = 25, Per Fig. 14 Rel. Humidity < 30%) Per Fig. 15 |
VISOL |
- - |
Vdc |
|
Collector Current - Continuous |
IC ICM |
10 15 |
Adc |
| Base Current - Continuous - Pulsed (1) |
IB IBM |
5.0 10 |
Adc |
| Maximum Repetitive EmitterBase Avalanche Energy |
W(BER) |
0.2 |
mJ |
| Total Power Dissipation @ TC = 25 Total Power Dissipation @ TC = 100 Derated above TC = 25 |
PD |
|
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +150 |
| Rating |
Symbol |
Value |
Unit | |
| CollectorEmitter Sustaining Voltage |
VCEO |
450 |
Vdc | |
| CollectorBase Breakdown Voltage |
VCBO |
1000 |
Vdc | |
| CollectorEmitter Breakdown Voltage |
VCES |
1000 |
Vdc | |
| Emitter-Base Voltage |
VEBO |
9 |
Vdc | |
| Collector Current - Continuous - Peak (1) |
IC ICM |
10 20 |
Adc | |
| Base Current - Continuous - Peak (1) |
IB IBM |
4 8 |
Adc | |
| Total Device Dissipation @ TC = 250C Derated above 25°C |
PD |
150 1.2 |
50 0.4 |
Watts W/ |
| Operating and Storage Temperature |
Tj,Tstg |
-65 to +150 |
||
| RMS Isolation Voltage (2) Per Figure 22 (1s, 25°C, Humidity 3 30%) Per Figure 23 TC = 25°C Per Figure 24 |
VISOL1 VISOL2 VISOL3 |
4500 3500 1500 |
V | |
The MJE/MJF18204 have an application specific stateoftheart die dedicated to the electronic ballast ("light ballast") and power supply applications.
| Rating |
Symbol |
MJE18204 |
MJF18204 |
Unit |
| CollectorEmitter Sustaining Voltage |
VCEO |
600 |
Vdc | |
| CollectorBase Breakdown Voltage |
VCBO |
1200 |
Vdc | |
| CollectorEmitter Breakdown Voltage |
VCES |
1200 |
Vdc | |
| Emitter-Base Voltage |
VEBO |
10 |
Vdc | |
| Collector Current - Continuous - Peak (1) |
IC II |
5 10 |
Adc | |
| Base Current - Continuous Base Current - Peak (1) |
IB IBM |
2 4 |
Adc | |
| RMS Isolation Voltage (2) Per Figure 22 (for 1 sec, R.H. 30%) Per Figure 23 TC = 25°C Per Figure 24 |
VISOL1 VISOL2 VISOL3 |
4500 3500 1500 |
Volts | |
| *Total Device Dissipation @ TC = 25 *Derate above 25°C |
PD |
75 0.6 |
35 0.28 |
/W |
| Operating and Storage Temperature |
Tj,Tstg |
-65 to +150 |
||
• Improved Global Efficiency Due to Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
- No Coil Required in Base Circuit for Fast TurnOff (No Current Tail)
• Full Characterization at 125
• Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions
• Two Package Choices: Standard TO220 or Isolated TO220
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