Transistors Bipolar (BJT) 10A 90V 30W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 90 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 10 A |
DC Collector/Base Gain hfe Min : | 20 | Configuration : | Single |
Maximum Operating Frequency : | 2 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 Full-Pak |
Packaging : | Tube |
Rating |
Symbol |
MJF31C MJF32C |
Unit |
CollectorEmitter Voltage |
VCEO(SUS) |
90 |
Vdc |
CollectorBase Voltage |
VCES |
90 |
Vdc |
EmitterBase Voltage |
VEBO |
5 |
Vdc |
Collector Current - Continuous |
IC |
10 |
Adc |
Base Current - Continuous |
IB |
6 |
Adc |
RMS Isolation Voltage (3) Test No. 1 Per Fig. 4 (for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 5 TA = 25) Test No. 3 Per Fig. 6 |
VISOL |
4500 3500 1500 |
VRMS |
Total Power Dissipation @ TC = 25 Derate Above 25 |
PD |
30 0.25 |
Watts W/ |
Total Power Dissipation @ TC = 25 Derate Above 25 |
PD |
2 0.016 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +150 |
Technical/Catalog Information | MJF3055 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 90V |
Current - Collector (Ic) (Max) | 10A |
Power - Max | 30W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 4A |
Frequency - Transition | 2MHz |
Current - Collector Cutoff (Max) | 1A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack (Straight Leads) |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MJF3055 MJF3055 MJF3055OS ND MJF3055OSND MJF3055OS |