MJF31C

Transistors Bipolar (BJT) 3A 100V 30W NPN

product image

MJF31C Picture
SeekIC No. : 00213517 Detail

MJF31C: Transistors Bipolar (BJT) 3A 100V 30W NPN

floor Price/Ceiling Price

Part Number:
MJF31C
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 25 Configuration : Single
Maximum Operating Frequency : 3 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220 Full-Pak
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Packaging : Tube
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-220 Full-Pak


Application

• CollectorEmitter Saturation Voltage VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• CollectorEmitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min)
• High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation



Specifications

Rating
Symbol
MJF31C
MJF32C
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCB
100
Vdc
EmitterBase Voltage
VEB

5.0

Vdc
Collector Current - Continuous
IC
3.0
5.0
Adc
Collector Current Continuous Peak
IB
1.0
Adc
Total Power Dissipation @ TC = 25
Derate Above 25
PD
28
0.22
Watts
W/
Total Power Dissipation @ TC = 25
Derate Above 25
PD
2.0
0.016
Watts
W/
Unclamped Inductive
Load Energy(Note 1)
E
32
mJ
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150



Parameters:

Technical/Catalog InformationMJF31C
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)3A
Power - Max28W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)300A
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJF31C
MJF31C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Transformers
Motors, Solenoids, Driver Boards/Modules
Memory Cards, Modules
View more