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MJ11025, MJ11028, MJ11029

Table of contents:
Info of MJ11025
Info of MJ11028
Info of MJ11029

MJ11025, MJ11028, MJ11029 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3 D/C:07+

MJ11025, MJ11028, MJ11029 Datasheet download

Five Points

Part Number: MJ11028

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3

D/C: 07+

Description: TRANS DARL NPN 50A 60V TO3

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MJ11028 Parameters

Technical/Catalog Information	MJ11028
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	50A
Power - Max	300W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 250mA, 25A
Frequency - Transition	-
Current - Collector Cutoff (Max)	2mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJ11028 MJ11028 MJ11028OS ND MJ11028OSND MJ11028OS

MJ11029 Maximum Ratings

Rating	Symbol	MJ11028 MJ11029	MJ11030 MJ11031	MJ11032 MJ11033	Unit
CollectorEmitter Voltage	V_CEO	60	90	120	Vdc
Collector Base Voltage	V_CB	60	90	120	Vdc
EmitterBase Voltage	V_EB	5			Vdc
Collector Current - Continuous Peak	I_C ICM	50 100			Adc
Base Current - Continuous	I_B	2			Adc
Total Power Dissipation @ T_C = 25 Derate above 25C @ T_C = 100	P_D	300 1.71			Watts W/
Operating and Storage Junction Temperature Range	T_J, T_stg	65 to +200

MJ11029 Typical Application

• High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
• Junction Temperature to +200C

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