Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 500 Vdc CollectorEmitter Voltage VCEX 500 Vdc CollectorEmitter Voltage VCEV 700 Vdc Emitter Base Voltage VEB 8 Vdc Collector Current - Continuous- Peak (1) IC...
MJ10009: Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 500 Vdc CollectorEmitter Voltage VCEX 500 Vdc CollectorEmitter Voltage VCEV 700...
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Rating |
Symbol |
Value |
Unit |
CollectorEmitter Voltage |
VCEO |
500 |
Vdc |
CollectorEmitter Voltage |
VCEX |
500 |
Vdc |
CollectorEmitter Voltage |
VCEV |
700 |
Vdc |
Emitter Base Voltage |
VEB |
8 |
Vdc |
Collector Current - Continuous - Peak (1) |
IC ICM |
20 30 |
Adc |
Base Current - Continuous - Peak (1) |
IB IBM |
2.5 5 |
Adc |
Total Power Dissipation @ TC = 25 @ TC = 100 Derate above 25 |
PD |
175 100 1 |
Watts W/ |
Operating and Storage Junction Temperature Range |
TJ,Tstg |
65 to +200 |
The MJ10009 Darlington transistor is designed for highvoltage, highspeed,power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast TurnOff Times
1.6 s (max) Inductive Crossover Time 10 A, 100
3.5 s (max) Inductive Storage Time 10 A, 100
Operating Temperature Range 65 to +200
100 Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents