MJ10008, MJ10009, MJ1001 Selling Leads, Datasheet
MFG:MOT Package Cooled:TO-3P D/C:00+
MJ10008, MJ10009, MJ1001 Datasheet download
Part Number: MJ10008
MFG: MOT
Package Cooled: TO-3P
D/C: 00+
MJ10008, MJ10009, MJ1001
- Table of contents:
Info of MJ10008
Info of MJ10009
Info of MJ1001
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About MJ10008
PDF/DataSheet Download
Datasheet: MJ10008
File Size: 200854 KB
Manufacturer: MOSPEC [Mospec Semiconductor]
Download : Click here to Download
About MJ10009
PDF/DataSheet Download
Datasheet: MJ10009
File Size: 200854 KB
Manufacturer: MOSPEC [Mospec Semiconductor]
Download : Click here to Download
About MJ1001
PDF/DataSheet Download
Datasheet: MJ1001
File Size: 142616 KB
Manufacturer: CENTRAL [Central Semiconductor Corp]
Download : Click here to Download
MJ10009 General Description
The MJ10009 Darlington transistor is designed for highvoltage, highspeed,power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast TurnOff Times
1.6 s (max) Inductive Crossover Time 10 A, 100
3.5 s (max) Inductive Storage Time 10 A, 100
Operating Temperature Range 65 to +200
100 Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MJ10009 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| CollectorEmitter Voltage |
VCEO |
500 |
Vdc |
| CollectorEmitter Voltage |
VCEX |
500 |
Vdc |
| CollectorEmitter Voltage |
VCEV |
700 |
Vdc |
| Emitter Base Voltage |
VEB |
8 |
Vdc |
| Collector Current - Continuous - Peak (1) |
IC ICM |
20 30 |
Adc |
| Base Current - Continuous - Peak (1) |
IB IBM |
2.5 5 |
Adc |
| Total Power Dissipation @ TC = 25 @ TC = 100 Derate above 25 |
PD |
175 100 1 |
Watts W/ |
| Operating and Storage Junction Temperature Range |
TJ,Tstg |
65 to +200 |
MJ1001 Maximum Ratings
|
Rating |
Symbol |
MJ1102 |
MJ1101 |
Unit |
| CollectorEmitter Voltage |
VCEO |
60 |
80 |
Vdc |
| Collector Base Voltage |
VCB |
60 |
80 |
Vdc |
| EmitterBase Voltage |
VEB |
5.0 |
Vdc | |
| Collector Current |
IC |
10 |
Adc | |
| Base Current - Continuous |
IB |
0.1 |
Adc | |
| Total Power Dissipation @ TC = 25 Derate above 25 @ TC = 100 |
PD |
90 0.515 |
Watts W/ | |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +200 |
||
MJ1001 Typical Application
• High DC Current Gain - hFE = 6000 (Typ) @ IC = 3.0 Adc
• Monolithic Construction with Builtin BaseEmitter Shunt Resistors
• Monolithic Construction with Builtin BaseEmitter Shunt Resistors
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