MJ12005D

The MJ12005D is designed as a silicon NPN power transistor with integrated damper diode which is specifically designed for use in large-screen color deflection circuits.

MJ12005D has five features. The first one is collector to emitter voltage would e 1500V. The second one is glassivated base to collector junction. The third one is safe operating area at 50us = 20A, 400V. The fourth one is switching times with inductive loads would be 0.4us at Ic=5.0A. The fifth one is C-E diode forward voltage specified. That are all the main features.

Some absolute maximum ratings of MJ12005D have been concluded into several points as follow. The first one is about its collector to emitter voltage which would be 1500V. The second one is about its emitter to base voltage which would be 5.0V. The third one is about its collector current which would be 8.0A. The fourth one is about its emitter current which would be 12A. The fifth one is about its base current which would be 4.0A. The sixth one is about its total power dissipation which would be 100W at Tc=25°C and would be 40W at Tc=100°C. The seventh one is about its operating and storage junction temperature range which would be from -65°C to +150°C. The eighth one is about its thermal resistance, junction to case which would be 1.25°C/W. The ninth one is about its maximum lead temperature for soldering which would be 275°C.

Also some electrical characteristics about MJ12005D.  The first one is about iMJ12005D collector to emitter sustaining voltage which would be min 750V. The second one is about its collector cutoff current which would be max 1.0mA. The third one is about its emitter cutoff current which would be max 200mA. The fourth one is about its diode forward voltage which would be max 2.5V. The fifth one is about its collector to emitter saturation voltage which would be max 5.0V. The sixth one is about its vase to emitter saturation voltage which would be max 1.5V. And so on. For more information please contact us.