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M28234, M282510-14, M28256

Table of contents:
Info of M28234
Info of M282510-14
Info of M28256

M28234, M282510-14, M28256 Selling Leads, Datasheet

MFG:1589 Package Cooled:BGA D/C:BGA

M28234, M282510-14, M28256 Datasheet download

Five Points

Part Number: M28234

MFG: 1589

Package Cooled: BGA

D/C: BGA

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M28256 General Description

The M28256and M28256-Ware 32K x8 low power ParallelEEPROMfabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology.

M28256 Maximum Ratings

Symbol	Parameter	Value	Unit
T_A	Ambient Operating Temperature ⁽²⁾	40 to 85
T_STG	Storage Temperature Range	65 to 150
V_CC	Supply Voltage	0.3 to 6.5	V
V_IO	Input/Output Voltage	0.3 to VCC +0.6	V
V_I	Input Voltage	0.3 to 65	V
V_ESD	Electrostatic Discharge Voltage (Human Body model) ⁽³⁾	4000	V

Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "AbsoluteMaximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Depends on range.
3. 100pF through 1500W; MIL-STD-883C, 3015.7

M28256 Features

`FASTACCESSTIME:
   90ns at 5V
   120ns at 3V
`SINGLE SUPPLY VOLTAGE:
   5V± 10% for M28256
   2.7V to 3.6V for M28256-xxW
`LOWPOWER CONSUMPTION
`FAST WRITE CYCLE:
   64 Bytes Page Write Operation
   Byte or Page Write Cycle
`ENHANCED END of WRITEDETECTION:
   Data Polling
   Toggle Bit
`STATUS REGISTER
`HIGH RELIABILITYDOUBLE POLYSILICON, CMOS TECHNOLOGY:
   Endurance >100,000 Erase/Write Cycles
   Data Retention >10 Years
`JEDEC APPROVEDBYTEWIDE PIN OUT
`ADDRESS and DATA LATCHED ON-CHIP
`SOFTWAREDATA PROTECTION

M28256 Connection Diagram

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