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K9W4G08U1M, K9W4G08U1M-YCBO, K9W4G08U1M-YIBO

Table of contents:
Info of K9W4G08U1M
Info of K9W4G08U1M-YCBO
Info of K9W4G08U1M-YIBO

K9W4G08U1M, K9W4G08U1M-YCBO, K9W4G08U1M-YIBO Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSOP D/C:05+

K9W4G08U1M, K9W4G08U1M-YCBO, K9W4G08U1M-YIBO Picture

K9W4G08U1M, K9W4G08U1M-YCBO, K9W4G08U1M-YIBO Datasheet download

Five Points

Part Number: K9W4G08U1M

MFG: SAMSUNG

Package Cooled: TSOP

D/C: 05+

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K9W4G08U1M General Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package.

K9W4G08U1M Maximum Ratings

Parameter		Symbol	Rating		Unit
			K9K2GXXQ0M(1.8V)	K9XXGXXUXM(3.3V)
Voltage on any pin relative to V_SS		V_IN/OUT	-0.6 to + 2.45	-0.6 to + 4.6	V
		V_CC	-0.6 to + 2.45	-0.6 to + 4.6
Temperature Under Bias	K9XXGXXXXM-XCB0	T_BIAS	-10 to +125
	K9XXGXXXXM-XIB0		-40 to +125
Storage Temperature	K9XXGXXXXM-XCB0	T_STG	-65 to +150
	K9XXGXXXXM-XIB0
Short Circuit Current		I_OS	5		mA

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V_CC,+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9W4G08U1M Features

· Voltage Supply
   -1.8V device(K9K2GXXQ0M): 1.7V~1.95V
   -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
· Organization
   - Memory Cell Array
   -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit
   -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit
   - Data Register
   -X8 device(K9K2G08X0M): (2K + 64)bit x8bit
   -X16 device(K9K2G16X0M): (1K + 32)bit x16bit
   - Cache Register
-X8 device(K9K2G08X0M): (2K + 64)bit x8bit
   -X16 device(K9K2G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
   - Page Program
   -X8 device(K9K2G08X0M): (2K + 64)Byte
   -X16 device(K9K2G16X0M): (1K + 32)Word
   - Block Erase
   -X8 device(K9K2G08X0M): (128K + 4K)Byte
   -X16 device(K9K2G16X0M): (64K + 2K)Word
· Page Read Operation
   - Page Size
   - X8 device(K9K2G08X0M): 2K-Byte
   - X16 device(K9K2G16X0M) : 1K-Word
   - Random Read : 25ms(Max.)
   - Serial Access
     1.8V device(K9K2GXXQ0M): 80ns(Min.)
     3.3V device(K9XXGXXUXM): 50ns(Min.)
     256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
· Fast Write Cycle Time
   - Program time : 300ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
   - K9K2GXXX0M-YCB0/YIB0
     48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9K2G08U0M-VCB0/VIB0
     48 - Pin WSOP I (12X17X0.7mm)
   - K9K2GXXX0M-PCB0/PIB0
     48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
   - K9K2G08U0M-FCB0/FIB0
      48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
      * K9K2G08U0M-V,F(WSOPI ) is the same device as
      K9K2G08U0M-Y,P(TSOP1) except package type.
   - K9W4GXXU1M-YCB0,PCB0/YIB0,PIB0 : Two K9K2G08U0M stacked.
     48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9W4GXXU1M-KCB0,ECB0/KIB0,EIB0 : Two K9K2G08U0M stacked.
     48 - Pin TSOP I (12 x 17 / 0.5 mm pitch)

K9W4G08U1M Connection Diagram

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