Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + 64)Byte- Block Erase : (128K + 4K)Byte• Page Read Operation- Page Size : (2K + 64)Byte- Random...
K9WAG08U1A: Features: • Voltage Supply- 2.70V ~ 3.60V• Organization- Memory Cell Array : (1G + 32M) x 8bit- Data Register : (2K + 64) x 8bit• Automatic Program and Erase- Page Program : (2K + ...
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PinoutDescriptionThe K9WAG08U1A-PCBO is a kind of perliminary 8G-bit NAND flash memory with spare ...
Features: • Voltage Supply - 2.70V ~ 3.60V• Organization - Memory Cell Array : (1G + 3...
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VCC | -0.6 to +4.6 | V | |
VIN | -0.6 to +4.6 | |||
VI/O | -0.6 to Vcc+0.3 (<4.6V) | |||
Temperature Under Bias | K9XXG08UXA-XCB0 | TBIAS | -10 to +125 | °C |
K9XXG08UXA-XIB0 | -40 to +125 | |||
Storage Temperature | K9XXG08UXA-XCB0 | TSTG | -65 to +150 | °C |
K9XXG08UXA-XIB0 | ||||
Short Circuit Current | IOS | 5 | mA |
Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memory with spare 256M-bit. K9K8G08U0A NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.