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K9F64O8UOC-TCB0, K9F8008W0M-TCB0, K9F8008W0M-TCB0 US 2-3 DAYS 30000 SAMSUNG - -

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Info of K9F64O8UOC-TCB0
Info of K9F8008W0M-TCB0
Info of K9F8008W0M-TCB0 US 2-3 DAYS 30000 SAMSUNG - -

K9F64O8UOC-TCB0, K9F8008W0M-TCB0, K9F8008W0M-TCB0 US 2-3 DAYS 30000 SAMSUNG - - Selling Leads, Datasheet

MFG:SAM Package Cooled:TSOP D/C:2004

K9F64O8UOC-TCB0, K9F8008W0M-TCB0, K9F8008W0M-TCB0 US 2-3 DAYS 30000 SAMSUNG - - Picture

K9F64O8UOC-TCB0, K9F8008W0M-TCB0, K9F8008W0M-TCB0 US 2-3 DAYS 30000 SAMSUNG - - Datasheet download

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Part Number: K9F64O8UOC-TCB0

MFG: SAM

Package Cooled: TSOP

D/C: 2004

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K9F8008W0M-TCB0 General Description

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250ms and an erase operation can be performed in typically 2ms on a 4K-byte block.

Data in the page can be read out at 80ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase system functions, including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the K9F8008W0M extended reliability of 1,000,000 program/erase cycles by providing either ECC(Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 8bytes of a page combined with the other 256 bytes can be utilized by system-level ECC.

The K9F8008W0M is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

K9F8008W0M-TCB0 Maximum Ratings

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to V_SS		V_IN	-0.6 to +7.0	V
Temperature Under Bias	K9F1608W0A-TCB0	T_BIAS	-10 to +125	°C
	K9F1608W0A-TIB0		-40 to +125
Storage Temperature		T_STG	-65 to +150	°C
Short Circuit Output Current		I_OS	5	mA

K9F8008W0M-TCB0 Features

· Voltage supply : 2.7V ~ 5.5V
· Organization
   - Memory Cell Array : (1M + 32K)bit x 8bit
   - Data Register : (256 + 8)bit x8bit
· Automatic Program and Erase(Typical)
   - Page Program : (256 + 8)Byte in 250ms
   - Block Erase : (4K + 128)Byte in 2ms
   - Status Register
· 264-Byte Page Read Operation
   - Random Access : 10ms(Max.)
   - Serial Page Access : 80ns(Min.)
· System Performance Enhancement
   - Ready/ Busy Status Output
· Command/Address/Data Multiplexed I/O port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 1M Program/Erase Cycles
   - Data Retention : 10 years
· Command Register Operation
· 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)

K9F8008W0M-TCB0 Connection Diagram

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