K9F1208X0C

Features:

• Voltage Supply
   - 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
   - 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
   - 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
• Organization
   - Memory Cell Array : (64M + 2M) x 8bits
   - Data Register : (512 + 16) x 8bits
• Automatic Program and Erase
   - Page Program : (512 + 16) x 8bits
   - Block Erase : (16K + 512)Bytes
• Page Read Operation
   - Page Size : (512 + 16)Bytes
   - Random Access : 15µs(Max.)
   - Serial Page Access : 42ns(Min.)
• Fast Write Cycle Time
   - Program time : 200µs(Typ.)
   - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles with 1bit/512Byte ECC)
   - Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
   - K9F1208U0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
   - K9F1208X0C-JCB0/JIB0: Pb-Free Package 63-Ball FBGA(8.5 x 13 x 1.2mmt)
   - K9F1208B0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)


Pinout




Specifications

Parameter		Symbol	Rating		UNIT
			1.8V Device	2.7V/3.3V Device
Voltage on any pin relative to VSS		VCC	-0.6 to + 2.45	-0.6 to + 4.6	V
		VIN	-0.6 to + 2.45	-0.6 to + 4.6
		VI/O	-0.6 to Vcc + 0.3 (< 2.45V)	-0.6 to Vcc + 0.3 (< 4.6V)
Temperature Under Bias	K9F1208X0C-XCB0	TBIAS	-10 to +125
	K9F1208X0C-XIB0		-40 to +125
Storage Temperature	K9F1208X0C-XCB0	TSTG	-65 to +150
	K9F1208X0C-XIB0
Short Circuit Current		IOS	5		mA

NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V
    for periods <30ns.
    Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions,  may   overshoot to VCC+
    2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation
    should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure
    to absolute maximum rating conditions for extended periods may affect reliability.


Description

Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.