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K9F6408U0A-TCBD, K9F6408U0A-TIB0, K9F6408U0A-TIBO

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Info of K9F6408U0A-TCBD
Info of K9F6408U0A-TIB0
Info of K9F6408U0A-TIBO

K9F6408U0A-TCBD, K9F6408U0A-TIB0, K9F6408U0A-TIBO Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:SAMSUNG D/C:04+

K9F6408U0A-TCBD, K9F6408U0A-TIB0, K9F6408U0A-TIBO Picture

K9F6408U0A-TCBD, K9F6408U0A-TIB0, K9F6408U0A-TIBO Datasheet download

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Part Number: K9F6408U0A-TCBD

MFG: SAMSUNG

Package Cooled: SAMSUNG

D/C: 04+

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K9F6408U0A-TIB0 General Description

The K9F6408U0A is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and interna verify and margining of data. Even the write-intensive systems can take advantage of the K9F6408U0A¢s extended reliability of 1,000,000 program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications and also the spare 16 bytes of a pagecombined with the other 512 bytes can be utilized by systemlevel ECC.

The K9F6408U0A is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still camera and other portable applications requiring non-volatility.

K9F6408U0A-TIB0 Maximum Ratings

Parameter		Symbol	Rating	Unit
Voltage on any pin relative to V_SS		V_IN	-0.6 to + 4.6	V
Voltage on any pin relative to V_SS		V_CC	-0.6 to + 4.6	V
Temperature Under Bias	KM29U64000AT	T_BIAS	-10 to + 125	°C
Temperature Under Bias	KM29U64000AIT	T_BIAS	-40 to + 125	°C
Storage Temperature		T_STG	-65 to + 150	°C

NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V_CC+0.3V which, during transitions, may overshoot to V_CC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

K9F6408U0A-TIB0 Features

` Voltage Supply : 2.7V ~ 3.6V
` Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
` Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (8K + 256)Byte
` 528-Byte Page Read Operation
   - Random Access : 10ms(Max.)
   - Serial Page Access : 50ns(Min.)
` Fast Write Cycle Time
- Program Time : 200ms(Typ.)
   - Block Erase Time : 2s(Typ.)
` Command/Address/Data Multiplexed I/O port
` Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
` Reliable CMOS Floating-Gate Technology
   - Endurance : 1Million Program/Erase Cycles
   - Data Retention : 10 years
` Command Register Operation
` 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)

K9F6408U0A-TIB0 Connection Diagram

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