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· Low gate charge · International standard packages ·Epoxy meet UL 94 V-0, flammability classification · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Avalanche energy and current rated · Fast intrinsic Rectifier
IXFX26N60Q Typical Application
· Easy to mount · Space savings · High power density
IXFX26N90 Parameters
Technical/Catalog Information
IXFX26N90
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
900V
Current - Continuous Drain (Id) @ 25° C
26A
Rds On (Max) @ Id, Vgs
300 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
10800pF @ 25V
Power - Max
560W
Packaging
Tube
Gate Charge (Qg) @ Vgs
240nC @ 10V
Package / Case
PLUS 247
FET Feature
Standard
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFX26N90 IXFX26N90
IXFX26N90 Features
• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier
IXFX26N90 Typical Application
• DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls