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IXFT80N20Q, IXFT96N20P, IXFT9N80Q

Table of contents:
Info of IXFT80N20Q
Info of IXFT96N20P
Info of IXFT9N80Q

IXFT80N20Q, IXFT96N20P, IXFT9N80Q Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO

IXFT80N20Q, IXFT96N20P, IXFT9N80Q Picture

IXFT80N20Q, IXFT96N20P, IXFT9N80Q Datasheet download

Five Points

Part Number: IXFT80N20Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 09+

D/C: TO

Description: MOSFET N-CH 800V 9A TO-268

Price Break

Unit Price

11.83000

Extended Price

354.90

(All prices are in USD) Prices for reference only

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IXFT80N20Q Parameters

Technical/Catalog Information	IXFT80N20Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	28 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4600pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	180nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT80N20Q IXFT80N20Q

IXFT96N20P Parameters

Technical/Catalog Information	IXFT96N20P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	96A
Rds On (Max) @ Id, Vgs	24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4800pF @ 25V
Power - Max	600W
Packaging	Tube
Gate Charge (Qg) @ Vgs	145nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT96N20P IXFT96N20P

IXFT9N80Q Parameters

Technical/Catalog Information	IXFT9N80Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	1.1 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2200pF @ 25V
Power - Max	180W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT9N80Q IXFT9N80Q

IXFT9N80Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSS V_DGR	T_J= 25°C to 150°C T_J= 25°C to 150°C; R_GS = 1 M	800 800	V V
V_GSV_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DMI_AR	T_C = 25°C T_C = 25°C, pulse widthlimited by T_JM T_C = 25°C	9 36 9	A A A
E_ARE_AS	T_C= 25°C T_C= 25°C	20 700	mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	180	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150
T_L	1.6 mm (0.063 in.) from case for 10 s	300
M_D	Mounting torque TO-264	1.13/10	Nm/lb.in.
Weight	TO-247 TO-268	6 4	g

IXFT9N80Q Features

· IXYS advanced low Qg process
· Low gate charge and capacitances
- easier to drive
- aster switching
·International standard packages
· Low RDS (on)
· Unclamped Inductive Switching (UIS) ated
· Molding epoxies meet UL 94 V-0 lammability classification

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