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IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150, RG = 2 W
5
V/ns
PD
TC = 25
300
W
TJ TJM Tstg
-55 ... +150 150 -55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
300
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-247 TO-268
6 4
g g
IXFT58N20Q Features
· IXYS advanced low Qg process · International standard packages · Low gate charge and capacitance - easier to drive - faster switching · Low RDS (on) · Unclamped Inductive Switching (UIS) rated · Molding epoxies meet UL 94 V-0 flammability classification
IXFT60N25Q Parameters
Technical/Catalog Information
IXFT60N25Q
Vendor
IXYS
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
250V
Current - Continuous Drain (Id) @ 25° C
60A
Rds On (Max) @ Id, Vgs
47 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds
5100pF @ 25V
Power - Max
360W
Packaging
Tube
Gate Charge (Qg) @ Vgs
180nC @ 10V
Package / Case
TO-268
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IXFT60N25Q IXFT60N25Q
IXFT60N25Q Features
• Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier
