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IXFT26N60P, IXFT26N60Q, IXFT28N50F

Table of contents:
Info of IXFT26N60P
Info of IXFT26N60Q
Info of IXFT28N50F

IXFT26N60P, IXFT26N60Q, IXFT28N50F Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-268 D/C:08+/09+

IXFT26N60P, IXFT26N60Q, IXFT28N50F Picture

IXFT26N60P, IXFT26N60Q, IXFT28N50F Datasheet download

Five Points

Part Number: IXFT26N60P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-268

D/C: 08+/09+

Description: MOSFET N-CH 600V 26A TO-268

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IXFT26N60P Parameters

Technical/Catalog Information	IXFT26N60P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	270 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4150pF @ 25V
Power - Max	460W
Packaging	Tube
Gate Charge (Qg) @ Vgs	72nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT26N60P IXFT26N60P

IXFT26N60P Maximum Ratings

V_DSS	T_J= 25 to 150	600	V
V_DGR	T_J= 25 to 150; RGS = 1 M	600	V
V_GSS	Continuous	±30	V
V_GSM	Transient	±40	V
I_D25	T_C = 25	26	A
I_DM	T_C = 25, pulse width limited by TJM	65	A
I_AR	T_C = 25	26	A
E_AR	T_C = 25	40	mJ
E_AS	T_C= 25	1.2	J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150, R_G = 5	10	V/ns
P_D	T_C = 25	460	W
T_J		-55 ... +150
T_JM		150
T_stg		-55 ... +150
T_L	1.6 mm (0.062 in.) from case for 10 s Plastic body	300 250
M_d	Mounting torque (TO-3P&TO-247)	1.13/10 Nm/lb.in.
F_C	Mounting force (PLUS220)	11..65/2.5..15	N/lb
Weight	TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD	5.5 6.0 5.0 4.0	g g g g

IXFT26N60P Features

·Fast Recovery diode
·Unclamped Inductive Switching (UIS) rated
·International standard packages
·Low package inductance - easy to drive and to protect

IXFT26N60Q Parameters

Technical/Catalog Information	IXFT26N60Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	250 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	TO-268
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFT26N60Q IXFT26N60Q

IXFT26N60Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	600 600	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	T_C = 25°C T_C= 25°C, pulse width limited by T_JM T_C= 25°C	26 104 26	A A A
E_AR E_AS	T_C = 25°C T_C= 25°C	45 1.5	mj j
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS, T_J 150°C, R_G = 2	5	V/ns
P_D	T_C = 25°C	360	W
T_J T_JM T_stg		-55 ... +150 150 Tstg -55 ... +150	°C °C °C
TL	1.6 mm (0.063 in) from case for 10 s	300	°C
M_d	Mounting torque TO-247	1.13/10	Nm/lb.in.
Weight	TO-247 TO-268	6 4	g g

IXFT26N60Q Features

· Low gate charge
· International standard packages
·Epoxy meet UL 94 V-0, flammability classification
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Avalanche energy and current rated
· Fast intrinsic Rectifier

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