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IXFR34N80, IXFR38H100Q2, IXFR38N80Q2

IXFR34N80, IXFR38H100Q2, IXFR38N80Q2 Selling Leads, Datasheet

MFG:IXYS  Category:Discrete Semiconductor Products  Package Cooled:TO-  D/C:TO-

IXFR34N80 Picture

IXFR34N80, IXFR38H100Q2, IXFR38N80Q2 Datasheet download

Five Points

Part Number: IXFR34N80

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 800V 28A ISOPLUS247

 

 
 
 
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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
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  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFB38N100Q2

PDF/DataSheet Download

Datasheet: IXFB38N100Q2

File Size: 157581 KB

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Download : Click here to Download

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IXFR38H100Q2 Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFB38N100Q2

PDF/DataSheet Download

Datasheet: IXFB38N100Q2

File Size: 157581 KB

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IXFR38N80Q2 Suppliers

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  • IXF30025

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF30030

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)
  • IXF6402CE CA1

  • Vendor: Intel D/C: 10+& Qty: BGA  Adddate: 2024-05-17
  • Inquire Now
  • Anwell Components Co.   China
    Contact: Ms.Una Xie   MSN:una0724@live.cn
    Tel: 0086-755-83677299
    Fax: 0086-755-83677763
    (37)

About IXFR38N80Q2

PDF/DataSheet Download

Datasheet: IXFR38N80Q2

File Size: 581948 KB

Manufacturer: IXYS [IXYS Corporation]

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IXFR34N80 Parameters

Technical/Catalog InformationIXFR34N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs240 mOhm @ 17A, 10V
Input Capacitance (Ciss) @ Vds 7500pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR34N80
IXFR34N80

IXFR38N80Q2 Parameters

Technical/Catalog InformationIXFR38N80Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs240 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 8340pF @ 25V
Power - Max416W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR38N80Q2
IXFR38N80Q2

IXFR38N80Q2 Maximum Ratings

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
800
800
V
V
VGS
VGEM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C
28
150
38
A
A
A

EAR
EAS

TC = 25°C
TC = 25°C
75
4.0

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
20
V/ns
PD TC = 25°C
416
W

TJ
TJM
Tstg

-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
2500
3000
V~
V~
Weight

5

g

IXFR38N80Q2 Features

 Double metal process for low gate resistance
 Silicon chip on DCB substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 
Epoxy meet UL 94 V-0, flammability classification
 Avalanche energy and current rated
 Fast intrinsic Rectifier

IXFR38N80Q2 Typical Application

 Easy assembly
 Space savings
 High power density

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