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IXFR100N25, IXFR120N20, IXFR180N10

Table of contents:
Info of IXFR100N25
Info of IXFR120N20
Info of IXFR180N10

IXFR100N25, IXFR120N20, IXFR180N10 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO- D/C:TO-

IXFR100N25, IXFR120N20, IXFR180N10 Datasheet download

Five Points

Part Number: IXFR120N20

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-

D/C: TO-

Description: MOSFET N-CH 100V 165A ISOPLUS247

Price Break

Unit Price

14.78000

Extended Price

443.40

(All prices are in USD) Prices for reference only

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IXFR100N25 Parameters

Technical/Catalog Information	IXFR100N25
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	87A
Rds On (Max) @ Id, Vgs	27 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	300nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR100N25 IXFR100N25

IXFR100N25 Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE= 1 M	250 250	V V
V_GS V_GEM	Continuous Transient	±20 ±30	V V
I_D25I_L(RMS)I_DM I_AR	T_C = 25°C (MOSFET chip capability) T_C= External lead current limit T_C= 25°C, Note 1 T_C= 25°C	87 75 400 100	A A A A
E_ARE_AS	T_C= 25°C T_C= 25°C	64 3	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 2Ω	5	V/ns
P_D	T_C = 25°C	400	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
V_ISOL	50/60 Hz, RMS t = 1 min	2500	V~
Weight		30	g

IXFR100N25 Features

Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R_DS _(on) HDMOSTM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
Fast intrinsic Rectifier

IXFR100N25 Typical Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control

IXFR120N20 Parameters

Technical/Catalog Information	IXFR120N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	105A
Rds On (Max) @ Id, Vgs	17 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR120N20 IXFR120N20

IXFR120N20 Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE= 1 M	200 200	V V
V_GS V_GEM	Continuous Transient	±20 ±30	V V
I_D25 I_D(RMS)I_DM I_AR	T_C = 25°C (MOSFET chip capability) External lead (current limit) T_C = 25°C, Note 1 T_C = 25°C	105 76 480 120	A A A A
E_AR E_AS	T_C = 25°CT_C = 25°C	60 3	mJ J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 2	5	V/ns
P_D	T_C = 25°C	250	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
V_ISOL	50/60 Hz, RMS t = 1 min	2500	V~
Weight		5	g

IXFR120N20 Features

• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier

IXFR120N20 Typical Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

IXFR180N10 Parameters

Technical/Catalog Information	IXFR180N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	165A
Rds On (Max) @ Id, Vgs	8 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds	9400pF @ 25V
Power - Max	400W
Packaging	Tube
Gate Charge (Qg) @ Vgs	400nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR180N10 IXFR180N10

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