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IXFN80N50P, IXFN80N50Q2, IXFN90N30

Table of contents:
Info of IXFN80N50P
Info of IXFN80N50Q2
Info of IXFN90N30

IXFN80N50P, IXFN80N50Q2, IXFN90N30 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:66A/500V/MOS/1U D/C:N/A

IXFN80N50P, IXFN80N50Q2, IXFN90N30 Datasheet download

Five Points

Part Number: IXFN80N50P

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: 66A/500V/MOS/1U

D/C: N/A

Description: MOSFET N-CH 300V 90A SOT-227B

Price Break

1
10
50
100
500
1000

Unit Price

36.33000
30.27500
24.22000
18.04000
16.34850
15.14004

Extended Price

36.33
302.75
1211.00
1804.00
8174.25
15140.04

(All prices are in USD) Prices for reference only

Attentive hint

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IXFN80N50P Parameters

Technical/Catalog Information	IXFN80N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	66A
Rds On (Max) @ Id, Vgs	65 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	12700pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	195nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN80N50P IXFN80N50P

IXFN80N50Q2 Parameters

Technical/Catalog Information	IXFN80N50Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	60 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	12800pF @ 25V
Power - Max	890W
Packaging	Tube
Gate Charge (Qg) @ Vgs	250nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN80N50Q2 IXFN80N50Q2

IXFN90N30 Parameters

Technical/Catalog Information	IXFN90N30
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	90A
Rds On (Max) @ Id, Vgs	33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	10000pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN90N30 IXFN90N30

IXFN90N30 Maximum Ratings

Symbol	Test Conditions	Maximum Ratings
V_DSS V_DGR	T_J = 25°C to 150°C T_J = 25°C to 150°C; R_GE= 1 M	300 300	V V
V_GS V_GEM	Continuous Transient	±20 ±30	V V
I_D25I_DM I_AR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	90 360 90	A A A
E_AR	T_C= 25°C	3	mJ
E_AS	T_C= 25°C	5	J
dv/dt	I_S I_DM, di/dt 100 A/µs, V_DD V_DSS, T_J 150°C, R_G = 2Ω	5	V/ns
P_D	T_C = 25°C	560	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
TJ	1.6 mm (0.63 in) from case for 10 s	-	°C
V_ISOL	50/60 Hz, RMS t = 1 min I_ISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.. .
Weight		30	g

IXFN90N30 Features

• International standard package
• miniBLOC, with Aluminium nitride isolation
• Low R_DS _(on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

IXFN90N30 Typical Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

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