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IXFN180N20, IXFN200N06, IXFN200N07

Table of contents:
Info of IXFN180N20
Info of IXFN200N06
Info of IXFN200N07

IXFN180N20, IXFN200N06, IXFN200N07 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:MODULE D/C:30

IXFN180N20, IXFN200N06, IXFN200N07 Datasheet download

Five Points

Part Number: IXFN180N20

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: MODULE

D/C: 30

Description: MOSFET N-CH 70V 200A SOT-227B

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IXFN180N20 Parameters

Technical/Catalog Information	IXFN180N20
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	180A
Rds On (Max) @ Id, Vgs	10 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	22000pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	660nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN180N20 IXFN180N20

IXFN200N06 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	N07 70 N06 60 N07 70 N06 60	V V V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	200 180 100	A A A
E_ARE_AS	T_C = 25°C T_C = 25°C	30 2	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	520	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
V_ISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN200N06 Features

• International standard packages
• miniBLOC with Aluminium nitride isolation
• Low R_{DS (on)} HDMOS^TMprocess
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

IXFN200N06 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays

IXFN200N07 Parameters

Technical/Catalog Information	IXFN200N07
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	70V
Current - Continuous Drain (Id) @ 25° C	200A
Rds On (Max) @ Id, Vgs	6 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	9000pF @ 25V
Power - Max	520W
Packaging	Tube
Gate Charge (Qg) @ Vgs	480nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN200N07 IXFN200N07

IXFN200N07 Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C; R_GS = 1 M	N07 70 N06 60 N07 70 N06 60	V V V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C= 25°C T_C = 25°C, pulse width limited by T_{JM T_C = 25°C}	200 180 100	A A A
E_ARE_AS	T_C = 25°C T_C = 25°C	30 2	mJ J
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	520	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
V_ISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g

IXFN200N07 Features

IXFN200N07 Typical Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays

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