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IXFH15N100Q, IXFH16N80, IXFH1799

Table of contents:
Info of IXFH15N100Q
Info of IXFH16N80
Info of IXFH1799

IXFH15N100Q, IXFH16N80, IXFH1799 Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:IXYS D/C:06+

IXFH15N100Q, IXFH16N80, IXFH1799 Picture

IXFH15N100Q, IXFH16N80, IXFH1799 Datasheet download

Five Points

Part Number: IXFH15N100Q

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: IXYS

D/C: 06+

Description: MOSFET N-CH 1000V 15A TO-247

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IXFH15N100Q Parameters

Technical/Catalog Information	IXFH15N100Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH15N100Q IXFH15N100Q

IXFH15N100Q Maximum Ratings

Symbol	Test Conditions	Maximum	Ratings
V_DSSV_DGR	T_J= 25°C to 150°C T_J = 25°C to 150°C R_GS=1M	1000 1000	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25I_DM IAR	T_C = 25°C T_C = 25°C pulse width limited by T_JM T_C = 25°C	15 60 15	A A A A
E_AR E_AS	T_C = 25°C	45 1.5	0mJ mJ
dv/dt	I_S I_DM, di/dt 100 A/s, V_DD V_DSS T_J 150°C, R_G = 2	5	V/ns
P_D	T_C= 25°C	360	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-247 TO-264	1.13/10 0.9/6	Nm/lb.in. Nm/lb.in.
Weight	TO-247 TO-268 TO-264	6 4 10	g g g

IXFH15N100Q Features

·IXYS advanced low Qg process
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Low R_{DS (on)} low Qg
·Avalanche energy and current rated
·Fast intrinsic rectifier

IXFH15N100Q Typical Application

·Easy to mount
·Space savings
·High power density

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