MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO247 D/C:2008+
IPW60R199CP, IPW60R299CP, IPXF26175-103 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO247
D/C: 2008+
Description: MOSFET N-CHAN 650V TO-247
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| Technical/Catalog Information | IPW60R199CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1520pF @ 100V |
| Power - Max | 139W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPW60R199CP IPW60R199CP |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
TC=25 |
16 |
A |
|
TC=100 |
10 | |||
| Pulsed drain current2) |
ID,pulse |
TC=25 |
51 | |
| Avalanche energy, single pulse |
EAS |
ID=6.6A,VDD=50V |
436 |
mJ |
| Avalanche energy, repetitive tAR2),3) |
EAR |
ID=6.6A,VDD=50V |
0.66 | |
| Avalanche energy, repetitive tAR2),3) |
IAR |
6.6 |
A | |
| MOSFET dv /dt ruggedness |
dv /dt |
VDS=0...480 V |
50 |
V/ns |
| Gate source voltage |
VGS |
static |
±20 |
V |
|
AC (f >1 Hz) |
±30 | |||
| Power dissipation |
Ptot |
TC=25 |
139 |
W |
| Operating and storage temperature |
Tj, Tstg |
-55 ... 150 |
||
| Mounting torque |
M3 and M3.5 screws |
60 |
Ncm |
| Technical/Catalog Information | IPW60R299CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 299 mOhm @ 6.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 96W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPW60R299CP IPW60R299CP |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current |
ID |
TC=25 |
11 |
A |
|
TC=100 |
4 | |||
| Pulsed drain current2) |
ID,pulse |
TC=251) |
34 | |
| Avalanche energy, single pulse |
EAS |
ID=4.4A,VDD=50V |
390 |
mJ |
| Avalanche energy, repetitive t AR 2),3) |
EAR |
ID=4.4A,VDD=50V |
0.44 | |
| Avalanche current, repetitive t AR 2),3) |
IAR |
4.4 |
A | |
| MOSFET dv /dt ruggedness |
dv /dt |
VDS=0...480 V |
50 |
KV/s |
| Gate source voltage |
VGS |
static |
±20 |
V |
|
AC (f >1 Hz) |
±30 | |||
| Power dissipation |
Ptot |
TC=25 |
96 |
W |
| Operating and storage temperature |
Tj, Tstg |
-55 ... 150 |
||
| Mounting torque |
M3 and M3.5 screws |
60 |
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