MOSFET COOL MOS PWR TRANS MAX PWR 650V
IPW60R099CP: MOSFET COOL MOS PWR TRANS MAX PWR 650V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 31 A | ||
Resistance Drain-Source RDS (on) : | 0.099 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=25 |
31 |
A |
TC=100 |
19 | |||
Pulsed drain current2) |
ID,pulse |
TC=251) |
93 | |
Avalanche energy, single pulse |
EAS |
ID=11A,VDD=50V |
800 |
mJ |
Avalanche energy, repetitive tAR2),3) |
EAR |
ID=11A,VDD=50V |
1.2 | |
Avalanche energy, repetitive tAR2),3) |
IAR |
11 |
A | |
MOSFET dv /dt ruggedness |
dv /dt |
VDS=0...480 V |
50 |
V/ns |
Gate source voltage |
VGS |
static |
±20 |
V |
AC (f >1 Hz) |
±30 | |||
Power dissipation |
Ptot |
TC=25 |
255 |
W |
Operating and storage temperature |
Tj, Tstg |
-55 ... 150 |
||
Mounting torque |
M3 and M3.5 screws |
60 |
Ncm |
Technical/Catalog Information | IPW60R099CP |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 31A |
Rds On (Max) @ Id, Vgs | 99 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 2800pF @ 100V |
Power - Max | 255W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IPW60R099CP IPW60R099CP |