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• Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge
IPW60R125CP Parameters
Technical/Catalog Information
IPW60R125CP
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25° C
25A
Rds On (Max) @ Id, Vgs
125 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds
2500pF @ 100V
Power - Max
208W
Packaging
Tube
Gate Charge (Qg) @ Vgs
70nC @ 10V
Package / Case
TO-247
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IPW60R125CP IPW60R125CP
IPW60R125CP Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
25
A
TC=100
16
Pulsed drain current2)
ID,pulse
TC=25
82
Avalanche energy, single pulse
EAS
ID=11 A, V DD=50 V
708
mJ
Avalanche energy, repetitive tAR2),3)
EAR
ID=11 A, V DD=50 V
1.2
Avalanche current, repetitive tAR2),3)
IAR
11
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...480 V
50
V/ns
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
T C=25
208
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
Mounting torque
60
Ncm
IPW60R125CP Features
• Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom
IPW60R165CP Parameters
Technical/Catalog Information
IPW60R165CP
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25° C
21A
Rds On (Max) @ Id, Vgs
165 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 100V
Power - Max
192W
Packaging
Tube
Gate Charge (Qg) @ Vgs
52nC @ 10V
Package / Case
TO-247
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IPW60R165CP IPW60R165CP
IPW60R165CP Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
21
A
TC=100
13
Pulsed drain current2)
ID,pulse
TC=251)
61
Avalanche energy, single pulse
EAS
ID=7.9A,VDD=50V
522
mJ
Avalanche energy, repetitive tAR2),3)
EAR
ID=7.9A,VDD=50V
0.79
Avalanche energy, repetitive tAR2),3)
IAR
7.9
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...480 V
50
V/ns
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
TC=25
192
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
Mounting torque
M3 and M3.5 screws
60
Ncm
IPW60R165CP Features
• Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
