MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:05+/06+ D/C:2008+
IPI80N06S3L-08, IPI80N08S2-07, IPIC0107B Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: 05+/06+
D/C: 2008+
Description: MOSFET N-CH 75V 80A TO262-3
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI80N08S2-07
File Size: 165087 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPI80N06S3L-08 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 7.9 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 6475pF @ 25V |
| Power - Max | 105W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 134nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI80N06S3L 08 IPI80N06S3L08 IPI80N06S3L 08IN ND IPI80N06S3L08INND IPI80N06S3L-08IN |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
80 |
A |
|
T C=100 , VGS=10 V2) |
61 | |||
|
Pulsed drain current2) |
I D,pulse |
T C=25 |
320 | |
|
Avalanche energy, single pulse2) |
EAS |
I D=80A |
170 |
mJ |
|
Drain gate voltage2) |
VDG |
|
55 |
V |
|
Gate source voltage4) |
VGS |
±16 |
V | |
|
Power dissipation |
Ptot |
T C=25 |
105 |
W |
|
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
||
|
IEC climatic category; DIN IEC 68-1 |
|
|
55/175/56 |
| Technical/Catalog Information | IPI80N08S2-07 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 7.4 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 4700pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI80N08S2 07 IPI80N08S207 |
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Continuous drain current1) |
ID |
TC=25 °C, VGS=10 V |
80 |
A |
|
TC=100 °C, VGS=10 V2) |
80 | |||
| Pulsed drain current2) |
ID,pulse |
TC=25 °C |
320 | |
| Avalanche energy, single pulse2) |
EAS |
ID=80A |
810 |
mJ |
| Gate source voltage4) |
VGS |
±20 |
V | |
| Power dissipation |
Ptot |
TC=25 °C |
300 |
W |
| Operating and storage temperature |
Tj,Tstg |
-55 ..+175 |
°C | |
| IEC climatic category; DIN IEC 68-1 |
55/175/56 |
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