IPI08CN10NG, IPI12CN10NG, IPI16CN10NG Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TO-262 D/C:08+
IPI08CN10NG, IPI12CN10NG, IPI16CN10NG Datasheet download
Part Number: IPI08CN10NG
MFG: INFINEON
Package Cooled: TO-262
D/C: 08+
IPI08CN10NG, IPI12CN10NG, IPI16CN10NG
- Table of contents:
Info of IPI08CN10NG
Info of IPI12CN10NG
Info of IPI16CN10NG
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About IPI03N03LA
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About IPI03N03LA
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About IPI03N03LA
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
IPI12CN10NG Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 | 67 | A |
| T C=100 | 48 | |||
| Pulsed drain current2) | I D,pulse | T C=25 | 268 | |
| Avalanche energy, single pulse | E AS | I D=67 A, R GS=25 | 154 | mJ |
| Reverse diode dv /dt | dv /dt | I D=67 A, V DS=80 V, di /dt =100 A/s, T j,max=175 |
6 | kV/s |
| Gate source voltage3) | V GS | ±20 | V | |
| Power dissipation | P tot | T C=25 | 125 | W |
| Operating and storage temperature | T j, T stg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V
IPI12CN10NG Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI16CN10NG Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | I D | T C=25 | 53 | A |
| T C=100 | 38 | |||
| Pulsed drain current2) | I D,pulse | T C=25 | 212 | |
| Avalanche energy, single pulse | E AS | I D=53 A, R GS=25 | 107 | mJ |
| Reverse diode dv /dt | dv /dt | I D=53 A, V DS=80 V, di /dt =100 A/s, T j,max=175 |
6 | kV/s |
| Gate source voltage3) | V GS | ±20 | V | |
| Power dissipation | P tot | T C=25 | 100 | W |
| Operating and storage temperature | T j, T stg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
2) see figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V
IPI16CN10NG Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
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