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IPI08CN10N G, IPI08CNE8NG, IPI09N03LA

IPI08CN10N G, IPI08CNE8NG, IPI09N03LA Selling Leads, Datasheet

MFG:Infineon Technologies  Category:Discrete Semiconductor Products  Package Cooled:PG-TO262-3-1  D/C:07+pbfree

IPI08CN10N G, IPI08CNE8NG, IPI09N03LA Picture

IPI08CN10N G, IPI08CNE8NG, IPI09N03LA Datasheet download

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Part Number: IPI08CN10N G

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: PG-TO262-3-1

D/C: 07+pbfree

Description: MOSFET N-CH 25V 50A I2PAK

 

 
 
 
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IPI08CN10N G Suppliers

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  • IPI14N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 390  Adddate: 2024-12-31
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPI03N03LA

PDF/DataSheet Download

Datasheet: IPI03N03LA

File Size: 325310 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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IPI08CNE8NG Suppliers

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  • IPI14N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 390  Adddate: 2024-12-31
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPI03N03LA

PDF/DataSheet Download

Datasheet: IPI03N03LA

File Size: 325310 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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IPI09N03LA Suppliers

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  • IPI14N03LA

  • Vendor: Infineon Pack: TO D/C: 09+& Qty: 390  Adddate: 2024-12-31
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)

About IPI09N03LA

PDF/DataSheet Download

Datasheet: IPI09N03LA

File Size: 355611 KB

Manufacturer: INFINEON [Infineon Technologies AG]

Download : Click here to Download

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IPI08CN10N G Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 95 A
TC=100 °C 68

Pulsed drain current2)

 ID,pulse TC=25 °C 380
Avalanche energy, single pulse EAS ID =95 A, RGS=25 262 mJ
Reverse diode dv /dt dv/dt ID =95 A, VDS=80 V,
di /dt =100 A/s,
Tj,max=175 °C		 6 kV/s
Gate source voltage3) VGS   ±20 V
Power dissipation Ptot TC=25 °C 167 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  

IPI08CN10N G Features

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification

IPI08CNE8NG Maximum Ratings

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
I D
T C=25
95
A
T C=100
68
Pulsed drain current2)
I D,pulse
T C=25
380
Avalanche energy, single pulse
EAS
I D=95 A, RGS=25
262
mJ
Reverse diode dv /dt
dv /dt
I D=95 A, VDS=68 V,
di /dt =100 A/s,
T j,max=175
6
kV/s
Gate source voltage3)
VGS
±20
V
Power dissipation
Ptot
T C=25
167
W
Operating and storage temperature
T j, T stg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
2) See figure 3
3) Tjmax=150 and duty cycle D=0.01 for Vgs<-5V

IPI08CNE8NG Features

• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification

IPI09N03LA Parameters

Technical/Catalog InformationIPI09N03LA
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs9.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1642pF @ 15V
Power - Max63W
PackagingTube
Gate Charge (Qg) @ Vgs13nC @ 5V
Package / CaseI&sup2;Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPI09N03LA
IPI09N03LA

IPI09N03LA Maximum Ratings

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 50 A
TC=100 °C 46 A
Pulsed drain current ID,pulse TC=25 °C 350 A
Avalanche energy, single pulse EAS ID=77 A, RGS=25 Ω 75 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C		 6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 63 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  

IPI09N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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