MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO262-3-1 D/C:07+pbfree
IPI47N10SL-26, IPI50CN10N G, IPI60R199CP Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO262-3-1
D/C: 07+pbfree
Description: MOSFET N-CH 650V 16A I2PAK
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPI47N10SL-26 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 47A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 33A, 10V |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 25V |
| Power - Max | 175W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 135nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI47N10SL 26 IPI47N10SL26 |
| Parameter | Symbol | Value | Conditions | Unit |
| Continuous drain current | ID | 20 | TC=25 °C | A |
| 14 | TC=100 °C | |||
| Pulsed drain current2) | I D,pulse | 80 | TC=25 °C | |
| Avalanche energy, single pulse | EAS | 29 | ID=20 A, RGS=25 | mJ |
| Reverse diode dv /dt | dv /dt | 6 | I D=20 A, VDS=80 V, di /dt =100 A/s, Tj,max=175 °C |
kV/s |
| Gate source voltage3) | VGS | ±20 | V | |
| Power dissipation | Ptot | 44 | TC=25 °C | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | IPI60R199CP |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 199 mOhm @ 9.9A, 10V |
| Input Capacitance (Ciss) @ Vds | 1520pF @ 100V |
| Power - Max | 139W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 43nC @ 10V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI60R199CP IPI60R199CP |
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