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Continuous drain current1) TC=25°C ID .....................................................73 or 63 A Pulsed drain current TC=25°C ID puls ...............................................................292 A Avalanche energy, single pulse ID=30A, VDD=25V, RGS=25W EAS ....................25 mJ Repetitive avalanche energy, limited by Tjmax 2) EAR .......................................10 mJ Reverse diode dv/dt IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C dv/dt ....6 kV/µs Gate source voltage VGS ...................................................................................±20 V Power dissipation TC=25°C Ptot .......................................................................107 W Operating and storage temperature Tj , Tstg .......................................-55... +175 °C IEC climatic category; DIN IEC 68-1 ...........................................................55/175/56
IPB10N03L Features
· N-Channel · Logic Level · Low On-Resistance RDS(on) · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature · Avalanche rated · dv/dt rated · Ideal for fast switching buck converters
IPB10N03L Typical Application
· The information herein is given to describe certain components and shall not be considered as warranted characteristics. · Terms of delivery and rights to technical change reserved. · We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. · Infineon Technologies is an approved CECC manufacturer.
IPB10N03LB Parameters
Technical/Catalog Information
IPB10N03LB
Vendor
Infineon Technologies
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25° C
50A
Rds On (Max) @ Id, Vgs
9.6 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds
1639pF @ 15V
Power - Max
58W
Packaging
Tape & Reel (TR)
Gate Charge (Qg) @ Vgs
13nC @ 5V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Logic Level Gate
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
IPB10N03LB IPB10N03LB
IPB10N03LB Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25 2)
50
A
TC=100
41
Pulsed drain current2)
ID,pulse
TC=253)
200
Avalanche energy, single pulse
EAS
ID=50 A, RGS=25
57
mJ
Reverse diode dv /dt
dv /dt
ID=50 A, VDS=20 V, di/dt =200 A/s, Tj,max=175
6
kV/s
VGS
±20
V
Power dissipation
Ptot
TC=25
58
W
Operating and storage temperature
Tj, Tstg
-55 ... 175
IEC climatic category; DIN IEC 68-1
55/175/56
1) J-STD20 and JESD22
IPB10N03LB Features
• Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant