Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) product (FOM)• Very low on-resistance R DS(on)• Superior thermal resistance• 175 opera...
IPB03N03LAG: Features: • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x R DS(on) produ...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | I D | T C=25 2) | 80 | A |
T C=100 | 80 | |||
Pulsed drain current | I D,pulse | T C=25 3) | 385 | |
Avalanche energy, single pulse | E AS | I D=80 A, R GS=25 | 960 | mJ |
Reverse diode dv /dt | dv /dt | I D=80 A, V DS=20 V, di /dt =200 A/s, T j,max=175 |
6 | kV/s |
Gate source voltage4) | V GS | ±20 | V | |
Power dissipation | P tot | T C=25 | 150 | W |
Operating and storage temperature | T j, T stg | -55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |