IPB04N03L

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Continuous drain current¹⁾ TC=25°C¹⁾ I_D ............................80 A
Pulsed drain current TC=25°C I_Dpuls .....................................320
Avalanche energy, single pulse
I_D=55A, V_DD=25V, R_GS=25  E_AS .......................................60 mJ
Repetitive avalanche energy, limited by T_jmax ²⁾ E_AR .............18
Reverse diode dv/dt
I_S=80A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C dv/dt ...6 kV/µs
Gate source voltage V_GS ...................................................±20 V
Power dissipation T_C=25°C Ptot ......................................188 W
Operating and storage temperature T_j , T_stg ......-55 to +175 °C
IEC climatic category; DIN IEC 68-1 ...........................55/175/56

1. Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 165A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2. Defined by design. Not subject to production test.