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IPB04N03LA, IPB04N03LA G, IPB04N03LB G

Table of contents:
Info of IPB04N03LA
Info of IPB04N03LA G
Info of IPB04N03LB G

IPB04N03LA, IPB04N03LA G, IPB04N03LB G Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

IPB04N03LA, IPB04N03LA G, IPB04N03LB G Datasheet download

Five Points

Part Number: IPB04N03LA

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 06+

Description: MOSFET N-CH 25V 80A D2PAK

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IPB04N03LA Parameters

Technical/Catalog Information	IPB04N03LA
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	3.9 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	3877pF @ 15V
Power - Max	107W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	32nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPB04N03LA IPB04N03LA IPB04N03LAINTR ND IPB04N03LAINTRND IPB04N03LAINTR

IPB04N03LA Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T_C=25 °C	80	A
Continuous drain current	I_D	T_C=100 °C	80	A
Pulsed drain current	I_D,pulse	T_C=25 °C	385	A
Avalanche energy, single pulse	E_AS	I_D=77 A, R_GS=25 Ω	290	mJ
Reverse diode dv /dt	dv /dt	I_D=80 A, V_DS=20 V, di /dt =200 A/µs, T_j,max=175 °C	6	kV/µs
Gate source voltage	V_GS		±20	V
Power dissipation	P_tot	T_C=25 °C	107	W
Operating and storage temperature	T_j, T_stg		-55 ... 175	°C
IEC climatic category; DIN IEC 68-1			55/175/56

IPB04N03LA Features

• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R_DS(on) product (FOM)
• Very low on-resistance R_DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated

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