MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:DC135-354V D/C:DC/DC/600W
IP-HAMD-CM, IPI03N03LA, IPI04N03LA Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: DC135-354V
D/C: DC/DC/600W
Description: MOSFET N-CH 25V 80A TO-262
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PDF/DataSheet Download
Datasheet: IPI03N03LA
File Size: 325310 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPI04N03LA
File Size: 356533 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | IPI03N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 7027pF @ 15V |
| Power - Max | 150W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 57nC @ 5V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPI03N03LA IPI03N03LA |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 2) | 80 | A |
| TC=100 | 80 | |||
| Pulsed drain current | ID,pulse | TC=25 3) | 385 | |
| Avalanche energy, single pulse | EAS | ID=80 A, RGS=25 Ω | 960 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 150 | W |
| Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | IPI04N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 3877pF @ 15V |
| Power - Max | 107W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 32nC @ 5V |
| Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPI04N03LA IPI04N03LA IPI04N03LAIN ND IPI04N03LAINND IPI04N03LAIN |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 °C | 80 | A |
| TC=100 °C | 80 | A | ||
| Pulsed drain current | ID,pulse | TC=25 °C | 385 | A |
| Avalanche energy, single pulse | EAS | ID=77 A, RGS=25 Ω | 290 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, Tj,max=175 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 107 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... 175 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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