IAM82008, IAM-82008, IAM-82008-TR1 Selling Leads, Datasheet
MFG:AGILENT Package Cooled:SMD D/C:01+
IAM82008, IAM-82008, IAM-82008-TR1 Datasheet download
Part Number: IAM82008
MFG: AGILENT
Package Cooled: SMD
D/C: 01+
MFG:AGILENT Package Cooled:SMD D/C:01+
IAM82008, IAM-82008, IAM-82008-TR1 Datasheet download
MFG: AGILENT
Package Cooled: SMD
D/C: 01+
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PDF/DataSheet Download
Datasheet: IAM82008
File Size: 64963 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IAM-82008
File Size: 64963 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IAM-82008-TR1
File Size: 64963 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
Hewlett-Packard's IAM-82008 is a complete moderate-power doublebalanced active mixer housed in a miniature low cost surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation of RF and LO frequencies below 50 MHz can be achieved using optional external capacitors to ground. The IAM-82008 is particularly well suited for applications that require loadinsensitive conversion gain and good spurious signal suppression and moderate dynamic range with low LO power. Typical applications include frequency down-conversion, up-conversion, modulation, demodulation, and phase detection. Markets include fiber-optics, GPS satellite navigation, mobile radio, and communications transmitters and receivers.
The IAM series of Gilbert multiplier-based frequency converters is fabricated using Hewlett Packard's 10 GHz fT 25 GHz fMAX ISOSAT™-1 silicon bipolar process. This process uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Symbol | Parameter | Units | Value |
Vd | Device Voltage | V | 15 |
Pt | Total Device Dissipation[2] | mW | 1200 |
Pin RF | RF Input Power | dBm | +14 |
Pin LO | LO Input Power | dBm | +14 |
Tj | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to +150 |
qjc | Thermal Resistance Junction to Case[3] | °C/W | 92 |