IAM-61008, IAM81008, IAM-81008 Selling Leads, Datasheet
MFG:AGILENT Package Cooled:SMD D/C:01+
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IAM-61008, IAM81008, IAM-81008 Datasheet download
Part Number: IAM-61008
MFG: AGILENT
Package Cooled: SMD
D/C: 01+
MFG:AGILENT Package Cooled:SMD D/C:01+
IAM-61008, IAM81008, IAM-81008 Datasheet download
MFG: AGILENT
Package Cooled: SMD
D/C: 01+
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PDF/DataSheet Download
Datasheet: IAM48
File Size: 112205 KB
Manufacturer: VICOR [Vicor Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IAM81008
File Size: 59786 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IAM-81008
File Size: 59786 KB
Manufacturer: HP [Agilent(Hewlett-Packard)]
Download : Click here to Download
The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applications that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption.
Typical applications include frequency down conversion,modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation,mobile radio, and battery powered communications receivers.
The IAM series of Gilbert multiplierbased frequency converters is fabricated using HP's 10ÊGHz, fT, 25ÊGHz f MAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment,submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Parameter |
Absolute Maximum[1] |
Device Voltage |
10 V |
Power Dissipation2,3 |
300 mW |
RF Input Power |
+14 dBm |
LO Input Power |
+14 dBm |
Junction Temperature |
150 |
Storage Temperature |
65to150 |
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 4.4 mW/ for TC > 82.