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NOTES: 1. TJ = 25 to150 . CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA76639S3S Features
• Ultra Low On-Resistance - rDS(ON) = 0.026, VGS = 10V - rDS(ON) = 0.027, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves
HUFA76645P3 Parameters
Technical/Catalog Information
HUFA76645P3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
75A
Rds On (Max) @ Id, Vgs
14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds
4400pF @ 25V
Power - Max
310W
Packaging
Tube
Gate Charge (Qg) @ Vgs
153nC @ 10V
Package / Case
TO-220A
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA76645P3 HUFA76645P3
HUFA76645P3 Maximum Ratings
Drain to Source Voltage (Note 1)............................ VDSS 100V Drain to Gate Voltage (RGS = 20k) (Note 1) ..................... VDGR 100V Gate to Source Voltage ................................ VGS ±16 V Drain Current Continuous (TC = 25, VGS = 5V) ............................. ID75A Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID75A Continuous (TC = 100, VGS = 5V) .............................ID63A Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID62A Pulsed Drain Current .................................IDM Figure 4 Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18 Power Dissipation .....................................PD310W Derate Above 25 ....................................2.07W/ Operating and Storage Temperature.....................TJ,TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s........................TL300 Package Body for 10s, See Techbrief TB334 .......................Tpkg260 NOTES: 1. TJ = 25 to 150. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA76645P3 Features
• Ultra Low On-Resistance - r DS(ON) = 0.014, VGS = 10V - r DS(ON) = 0.015, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves