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Drain to Source Voltage (Note 1)............................ VDSS 100V Drain to Gate Voltage (RGS = 20k) (Note 1) ..................... VDGR 100V Gate to Source Voltage ................................ VGS ±16 V Drain Current Continuous (TC = 25, VGS = 5V) ............................. ID18A Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID18A Continuous (TC = 100, VGS = 5V) .............................ID12A Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID12A Pulsed Drain Current .................................IDM Figure 4 Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18 Power Dissipation.....................................V PD75W Derate Above 25 .....................................0.5W/ Operating and Storage Temperature.....................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s........................TL300 Package Body for 10s, See Techbrief TB334 .......................Tpkg260 NOTES: 1. TJ = 25 to 150. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA76619D3S Features
• Ultra Low On-Resistance - r DS(ON) = 0.085, VGS = 10V - r DS(ON) = 0.087, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves
HUFA76619D3ST Parameters
Technical/Catalog Information
HUFA76619D3ST
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
18A
Rds On (Max) @ Id, Vgs
85 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds
767pF @ 25V
Power - Max
75W
Packaging
Tube
Gate Charge (Qg) @ Vgs
29nC @ 10V
Package / Case
DPak, SC-63, TO-252 (2 leads+tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA76619D3ST HUFA76619D3ST
HUFA76629D3 Parameters
Technical/Catalog Information
HUFA76629D3
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Through Hole
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25° C
20A
Rds On (Max) @ Id, Vgs
52 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds
1285pF @ 25V
Power - Max
110W
Packaging
Tube
Gate Charge (Qg) @ Vgs
46nC @ 10V
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA76629D3 HUFA76629D3
HUFA76629D3 Maximum Ratings
Drain to Source Voltage (Note 1)............................ VDSS 100V Drain to Gate Voltage (RGS = 20k) (Note 1) ..................... VDGR 100V Gate to Source Voltage ................................ VGS ±16 V Drain Current Continuous (TC = 25, VGS = 5V) ............................. ID20A Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID20A Continuous (TC = 100, VGS = 5V) .............................ID20A Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID20A Pulsed Drain Current .................................IDM Figure 4 Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18 Power Dissipation .....................................PD110W Derate Above 25 ....................................0.74W/ Operating and Storage Temperature ....................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s........................TL300 Package Body for 10s, See Techbrief TB334 .......................Tpkg260 NOTES: 1. TJ = 25 to 150. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
HUFA76629D3 Features
• Ultra Low On-Resistance - r DS(ON) = 0.052, VGS = 10V - r DS(ON) = 0.054, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electriecal Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves