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HUFA76445S3S, HUFA76504DK8T, HUFA76609D3

Table of contents:
Info of HUFA76445S3S
Info of HUFA76504DK8T
Info of HUFA76609D3

HUFA76445S3S, HUFA76504DK8T, HUFA76609D3 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

HUFA76445S3S, HUFA76504DK8T, HUFA76609D3 Datasheet download

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Part Number: HUFA76504DK8T

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 100V 10A TO-251AA

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HUFA76445S3S Parameters

Technical/Catalog Information	HUFA76445S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	4965pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76445S3S HUFA76445S3S

HUFA76445S3S Maximum Ratings

Drain to Source Voltage (Note 1) .......................... V_DSS60 V
Drain to Gate Voltage (R_GS= 20k) (Note 1) .................... V_DGR 60 V
Gate to Source Voltage ............................... V_GS±16 V
Drain Current
Continuous(T_C= 25, V_GS= 5V) .............................I_D75 A
Continuous (T_A = 25, V_GS = 10V) (Note 2)....................... I_D75A
Continuous (T_C= 100, V_GS= 5V) ............................I_D75A
Continuous (T_A= 100, V_GS = 4.5V) (Figure 2) ..................... I_D75A
Pulsed Drain Current................................I_DM Figure 4
Pulsed Avalanche Rating...........................ULS Figure6,17,18
Power Dissipation ...................................P_D310W
Derate Above 25 ..................................2.08 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L300
Package Body for 10s, See Techbrief 334 ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.

HUFA76445S3S Features

• Ultra Low On-Resistance
- r _DS(ON)= 0.0065,V_GS=10V
- r _DS(ON)= 0.0075,V_GS=5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves

HUFA76504DK8T Parameters

Technical/Catalog Information	HUFA76504DK8T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	200 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	270pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76504DK8T HUFA76504DK8T

HUFA76609D3 Parameters

Technical/Catalog Information	HUFA76609D3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	160 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	425pF @ 25V
Power - Max	49W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76609D3 HUFA76609D3

HUFA76609D3 Maximum Ratings

Drain to Source Voltage (Note 1)............................ V_DSS 100V
Drain to Gate Voltage (R_GS = 20k) (Note 1) ..................... V_DGR100V
Gate to Source Voltage  ................................ V_GS ±16 V
Drain Current
Continuous (T_C = 25, V_GS = 5V)   ............................. I_D10A
Continuous (T_C = 25, V_GS= 10V) (Figure 2) ........................I_D10A
Continuous (T_C = 100, V_GS = 5V)    .............................I_D7A
Continuous (T_C = 100, V_GS = 4.5V) (Figure 2) .......................I_D7A
Pulsed Drain Current .................................I_DM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation.....................................V P_D49W
Derate Above 25   ...................................0.327W/
Operating and Storage Temperature.....................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   .......................T_L300
Package Body for 10s, See Techbrief TB334 .......................T_pkg260
NOTES:
1. T_J= 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

HUFA76609D3 Features

• Ultra Low On-Resistance
- r _DS(ON) = 0.160, V_GS = 10V
- r _DS(ON) = 0.165, V_GS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves

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