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Drain to Source Voltage (Note 1) .......................... VDSS 60 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 60 V Gate to Source Voltage ............................... VGS ±16 V Drain Current Continuous(TC= 25, VGS= 5V) .............................ID55 A Continuous (TA = 25, VGS = 10V) (Note 2)....................... ID59A Continuous (TC= 100, VGS= 5V) ............................ID39A Continuous (TA = 100, VGS = 4.5V) (Figure 2) ..................... ID37A Pulsed Drain Current................................IDM Figure 4 Pulsed Avalanche Rating...........................ULS Figure6,17,18 Power Dissipation ...................................PD130W Derate Above 25..................................0.87 W/ Operating and Storage Temperature...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s ......................TL 300 Package Body for 10s, See Techbrief 334 ......................Tpkg 260 NOTE: 1. TJ = 25 to 150 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA76432P3 Features
• Ultra Low On-Resistance - r DS(ON) = 0.017, VGS = 10V - r DS(ON) = 0.019, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves
HUFA76432S3S Parameters
Technical/Catalog Information
HUFA76432S3S
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Mounting Type
Surface Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25° C
59A
Rds On (Max) @ Id, Vgs
17 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds
1765pF @ 25V
Power - Max
130W
Packaging
Tube
Gate Charge (Qg) @ Vgs
53nC @ 10V
Package / Case
D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature
Logic Level Gate
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
HUFA76432S3S HUFA76432S3S
HUFA76432S3S Maximum Ratings
Drain to Source Voltage (Note 1) .......................... VDSS 60 V Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 60 V Gate to Source Voltage ............................... VGS ±16 V Drain Current Continuous(TC= 25, VGS= 5V) .............................ID55 A Continuous (TA = 25, VGS = 10V) (Note 2)....................... ID59A Continuous (TC= 100, VGS= 5V) ............................ID39A Continuous (TA = 100, VGS = 4.5V) (Figure 2) ..................... ID37A Pulsed Drain Current................................IDM Figure 4 Pulsed Avalanche Rating...........................ULS Figure6,17,18 Power Dissipation ...................................PD130W Derate Above 25..................................0.87 W/ Operating and Storage Temperature...................TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s ......................TL 300 Package Body for 10s, See Techbrief 334 ......................Tpkg 260 NOTE: 1. TJ = 25 to 150 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. .
HUFA76432S3S Features
• Ultra Low On-Resistance - r DS(ON) = 0.017, VGS = 10V - r DS(ON) = 0.019, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves